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| to ? 3p 1. base 2. collector 3. emitter to-3p plastic-encapsulate transistors 2SB688 transistor (pnp) features z high breakdown voltage z complement to type 2sd718 applications z power amplifier applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -120 v collector-emitter breakdown voltage v (br)ceo * i c =-50ma,i b =0 -120 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -5 v collector cut-off current i cbo v cb =-120v,i e =0 -10 a emitter cut-off current i ebo v eb =-5v,i c =0 -10 a dc current gain h fe * v ce =-5v, i c =-1a 55 160 collector-emitter saturation voltage v ce(sat) * i c =-5a,i b =-500ma -2.5 v base-emitter voltage v be * v ce =-5v, i c =-5a -1.5 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 280 pf transition frequency f t v ce =-5v,i c =-1a, f=1mhz 10 mhz *pulse test classification of h fe rank r o range 55-110 80-160 symbol parameter value unit v cbo collector-base voltage -120 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -5 v i c collector current -8 a p c collector power dissipation 3 w r ja thermal resistance from junction to ambient 42 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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